page 1 of 1 T143-500 rev 26/01/ 2004 proton proton proton proton ? ? ? ? electrotex electrotex electrotex electrotex russia russia russia russia optimum power handling low on-state and switching losses designed for traction and industrial applications phase control thyristor type 1 43-500 mean on-state current i tav 500 a repetitive peak off-state voltage v drm repetitive peak reverse voltage v rrm 400 1600 v turn-off time t q 160; 250; 500 s v drm , v rrm , v 400 600 800 1000 1200 1400 1600 voltage code 4 6 8 10 12 14 16 t j , c ? 60 125 maximum allowable ratings symbols and parameters units values test conditions on-state i tav mean on-state current a 500 t c =94 c; 180 half-sine wave, 50 hz i trms rms on-state current a 1160 t c =94 c; full cycle sine wave, 50 hz i tsm surge on-state current ka 11.0 12.0 t j =t j max t j =25 c i 2 t circuit fusing considerations a 2 s . 10 3 605 720 t j =t j max t j =25 c 180 half-sine wave, 50 hz, single pulse; v r =0 v; gate pulse : 20 v, 5 ? , 1 s rise time, 50 s blocking v drm , v rrm repetitive peak off-state and repetitive peak reverse voltages v 400 1600 t j =t j max ; 180 half-sine wave, 50 hz; gate open v dsm , v rsm non-repetitive peak off-state and non-repetitive peak reverse voltages v 450 1800 t j = t j max ; 180 half-sine wave, 50 hz, single pulse gate open v d , v r direct off-state and direct reverse voltages v 0.75 . v drm 0.75 . v rrm t j =t j max ; gate open triggering p gm peak gate power dissipation w 40 t j =t j max p g(av) mean gate power dissipation w 6 t j =t j max v rgm peak gate reverse voltage v 5 t j =t j max switching (di t /dt) crit critical rate of rise of on-state current: non-repetitive repetitive a/ s 200 100 t j =t j max ; v d =0.67 . v drm ; i tm 2i t(av) ; gate pulse : 20 v, 5 ? , 1 s rise time, 50 s thermal t stg storage temperature c ? 60 50 t j junction temperature c ? 60 125
page 2 of 2 T143-500 rev 26/01/ 2004 characteristics symbols and parameters units values conditions on-state v tm peak on-state voltage v 1.80 t j =25 c; i tm =3.14 . i tav v t(to) on-state threshold voltage v 1.10 t j =t j max r t on-state slope resistance m ? 0.57 t j =t j max i l latching current ma 700 t j =25 c; v d =12 v; gate pulse : 20 v, 5 ? , 1 s rise time, 50 s i h holding current ma 300 t j =25 c; v d =12 v; gate open blocking i drm , i rrm repetitive peak off-state and repetitive peak reverse currents ma 30 t j =t j max ; v d =v drm ; v r =v rrm (dv d /dt) crit critical rate of rise of off-state voltage 1) v/ s 200 1600 t j =t j max ; v d =0.67 . v drm ; gate open triggering v gt gate trigger direct voltage v 3.50 i gt gate trigger direct current a 0.25 t j =25 c; v d =12 v; direct gate current v gd gate non-trigger direct voltage v 0. 5 i gd gate non-trigger direct current ma 10.0 t j =t j max ; v d =0.67 . v drm ; direct gate current switching t gt turn-on time s 25.0 t gd delay time s 7.0 t j =25 c; v d =100 v; i tm =i tav ; gate pulse : 20 v, 5 ? , 1 s rise time, 50 s t q turn-off time 2) s 160 250 500 t j =t j max ; i tm =i tav ; di r /dt=5 a/ s; v r =100 v; v d =0.67 v drm ; dv d /dt=50 v/ s q rr recovered charge c 1500 t rr reverse recovery time s 30.0 t j =t j max ; i tm =i tav ; di r /dt=5 a/ s; v r =100 v; thermal r thjc thermal resistance junction to case c/w 0.034 direct current, double side cooled note: 1) critical rate of rise of off-state voltage 2) turn-off time symbol of group p2 k2 e2 a2 t1 symbol of group t2 m2 e2 (dv d /dt) crit , v/ s 200 320 500 1000 1600 t q , s 160 250 500 overall dimensions 60 ma x 3,5 h1.5+0.2 +0,2 2 0 + 1 37+2 - 37+2 - 300+30 1 5 + 1 0 0 0 - - - 4,3 +0,18 2 holes - weight: 260 grams mounting force: 13.5 16.5 kn recommended heatsink: o143; o243; o343 part numbering guide t 143 500 16 t1 t2 n 1 2 3 4 5 6 7 1. thyristor 2. design version 3. mean on-state current, a 4. voltage code 5. critical rate of rise of off-state voltage 6. group of turn-off time 7. ambient conditions: n ? normal; t ? tropical
page 3 of 3 T143-500 rev 26/01/ 2004 fig 1 on-state characteristics fig 2 maximum allowable mean on-state current i tav vs. case temperature t c for sinusoidal current waveforms, f=50 hz fig 3 maximum allowable mean on-state current i tav vs. case temperature t c for rectangular current waveforms and for dc, f=50hz fig 4 on-state power dissipation p tav vs. mean on-state current i tav for sinusoidal current waveforms at different conduction angles,f=50hz fig 5 on-state power dissipation p tav vs. mean on-state current i tav for rectangular current waveforms and for dc at different conduction angles, f=50hz fig 6 transient thermal impedance junction to case z th(jc) 0 1 2 3 4 5 6 7 8 01234567891 0 i fgm ,a u fgm ,b 1 2 3 4 position (see fig. 7) on-off time ratio gate pulse length, ms gate pulse power, w 1 1 dc 6 2 2 10 8 3 20 1 20 4 40 0,5 40 fig 7 max. peak gate power loss: j.s.c. ?proton?electrotex? 19 leskova, 302027, orel russia, fax : +7 (0862) 41 00 56 phones : +7 (0862) 43 41 39 / 43 41 40 e-mail: eltex@orel.ru / alfa@valley.ru
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